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savantic semiconductor product specification silicon pnp power transistors 2sB1342 d escription with to-220fa package high dc current gain low saturation voltage darlington applications for low frequency power amplifier and power driver applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector -emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -4 a i cm collector current-peak -6 a t a =25 2 p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol www.datasheet.co.kr datasheet pdf - http://www..net/
savantic semiconductor product specification 2 silicon pnp power transistors 2sB1342 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma; i b =0 -80 v v (br)cbo collector-base breakdown voltage i c =-50a; i e =0 -80 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-4ma -1.0 -1.5 v i cbo collector cut-off current v cb =-80v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -3.0 ma h fe dc current gain i c =-2a ; v ce =-3v 1000 10000 f t transition frequency i c =-0.5a ; v ce =-5v 12 mhz c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 45 pf www.datasheet.co.kr datasheet pdf - http://www..net/
savantic semiconductor product specification 3 silicon pnp power transistors 2sB1342 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) www.datasheet.co.kr datasheet pdf - http://www..net/

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